Measurement of the strain in strained-Si/Si0.79Ge0.21 with HRBS/channeling

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 432-435

  Matsushita, T ^a   Sakai, W ^a   Nakajima, K ^a   Suzuki, M ^a   Kimura, K ^a   Agarwal, A ^b   Gossmann, H J ^b   Ameen, M ^b   Harima, H ^c  

^a KYOTO UNIVERSITY   (Japan)

^b AXCELIS TECHNOLOGIES   (United States)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

HRBS; Statistical equilibrium; Steering effect; Strained Si

Indexed keywords

COMPUTER SIMULATION; INTERFACES (MATERIALS); IONS; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

HRBS; STATISTICAL EQUILIBRIUM; STEERING EFFECT; STRAINED-SI;

STRAIN;

EID: 33745809887     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.03.024     Document Type: Article

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