Analysis of strain in ultra-thin GaAs/In0.2Ga0.8 As/GaAs single quantum well structures by channeling technique

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 640-644

  Kozanecki, A ^a   Kaczanowski, J ^b   Sealy, B J ^c   Gillin, W P ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTALLOGRAPHY; ELASTICITY; HELIUM; IONS; LATTICE CONSTANTS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN; ULTRATHIN FILMS;

ANGULAR SCAN PROFILES; ELASTICITY THEORY; ION CHANNELING; OFF NORMAL CRYSTALLOGRAPHIC AXES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030565148     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01081-5     Document Type: Article

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