Schottky barrier height in GaN/AlGaN heterostructures

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1041-1045

  Anwar, A F M ^a   Faraclas, Elias W ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

GaN HEMT; Modeling; Numerical simulation; Schottky barrier height

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; PARAMETER ESTIMATION; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS;

GAN HEMT; MODELING; SCHOTTKY BARRIER HEIGHT; SCHOTTKY BARRIER LOWERING;

HETEROJUNCTIONS;

EID: 33745743720     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.011     Document Type: Article

References (11)

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