Applications of bismuth-layered perovskite thin films to FET-type ferroelectric memories

Integrated Ferroelectrics

Volumn 79, Issue 1, 2006, Pages 3-13

  Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; FERROELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; MOSFET DEVICES; RANDOM ACCESS STORAGE; THIN FILMS;

FERROELECTRIC CAPACITORS; FERROELECTRIC MEMORIES; INTERDIFFUSION; MEMORY CELLS;

PEROVSKITE;

EID: 33745738831     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600657146     Document Type: Article

References (5)

1. M. Ross, US Patent No. 2791760 (1957).
2. K. Aizawa, B.-E. Park, Y. Kawashima, K. Takahashi, and H. Ishiwara, Appl. Phys. Lett., 85, 3199 (2004).
3. K. Takahashi, K. Aizawa, B.-E. Park, and H. Ishiwara, Jpn. J. Appl. Phys. 44 (2005) in press.
4. S.-M. Yoon and H. Ishiwara, IEEE Trans. ED-48, 2002 (2001).
5. H.-S. Kim, S. Yamamoto, T. Ishikawa, T. Fuchikami, H. Ohki, and H.Ishiwara, Jpn. J. Appl. Phys. 44, 2715 (2005).