Hydrogen-implant-induced polarization loss and recovery in lrO 2/Pb(Zr,Ti)O3/Pt capacitors

Journal of Applied Physics

Volumn 99, Issue 12, 2006, Pages

  Cross, J S ^a   Kurihara, K ^a   Sakaguchi, I ^b   Haneda, H ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; HYDROGEN; IRIDIUM COMPOUNDS; MASS SPECTROMETRY; OXIDES; POLARIZATION; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL IMAGES; HYDROGEN IMPLANTATION; POLARIZATION LOSS; SECONDARY ION MASS SPECTROSCOPY (SIMS);

CAPACITORS;

EID: 33745697524     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2200477     Document Type: Article

References (11)

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