Structural and optical properties of CdxZn1-xTe/ZnTe quantum dots grown on Si(1 0 0) substrates by using molecular beam epitaxy

Journal of Crystal Growth

Volumn 292, Issue 1, 2006, Pages 10-13

  Lee, H S ^a   Park, H L ^a   Kim, T W ^b  

^a Yonsei University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

A1. Atomic force microscopy; A1. Nanostructures; A1. X ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting ternary compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; GROUND STATE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SILICON; X RAY DIFFRACTION; ZINC COMPOUNDS;

BUFFER LAYERS; EXCITONIC PEAKS; INTERBAND TRANSITION PROPERTIES; SEMICONDUCTING TERNARY COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33745671320     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.083     Document Type: Article

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