Influence of buffer layer thickness on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition

Rengong Jingti Xuebao/Journal of Synthetic Crystals

Volumn 34, Issue 3, 2005, Pages 466-470

  Wu, Jie Jun ^a   Han, Xiu Xun ^a   Li, Jie Min ^a   Li, Da Bing ^a   Wei, Hong Yuan ^a   Kang, Ting Ting ^a   Wang, Xiao Hui ^a   Liu, Xiang Lin ^a   Wang, Zhan Guo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Buffer layer thickness; GaN; MOCVD; Sapphire substrate

Indexed keywords

EID: 22844451935     PISSN: 1000985X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)