Comparison of ghosting effects for three commercial a-Si EPIDs

Medical Physics

Volumn 33, Issue 7, 2006, Pages 2448-2451

  McDermott, L N ^a   Nijsten, S M J J G ^b   Sonke, J J ^a   Partridge, M ^c   Van Herk, M ^a   Mijnheer, B J ^a  

^a ANTONI VAN LEEUWENHOEK HOSPITAL   (Netherlands)

^b MAASTRICHT UNIVERSITY   (Netherlands)

^c INSTITUTE OF CANCER RESEARCH   (United Kingdom)

Author keywords

Amorphous silicon; Dose response; EPID dosimetry; Ghosting; Image lag

Indexed keywords

CHARGE TRAPPING; DOSIMETRY;

BEAM ENERGIES; DOSE RESPONSE; GHOSTING; GHOSTING EFFECTS; IMAGE LAGS; MONITOR UNITS; NON LINEAR; SILICON ELECTRONICS;

AMORPHOUS SILICON;

SILICON DIOXIDE;

AMORPHOUS SILICON ELECTRONIC PORTAL IMAGING DEVICE; ARTICLE; BEAM THERAPY; COMPARATIVE STUDY; DEVICE; DOSE RESPONSE; DOSIMETRY; ELECTRIC FIELD; IMAGING SYSTEM; MONITORING; NONLINEAR SYSTEM; PRIORITY JOURNAL; SIGNAL PROCESSING;

EID: 33745655388     PISSN: 00942405     EISSN: None     Source Type: Journal    
DOI: 10.1118/1.2207318     Document Type: Article

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