Dose-response and ghosting effects of an amorphous silicon electronic portal imaging device

Medical Physics

Volumn 31, Issue 2, 2004, Pages 285-295

  McDermott, L N ^a   Louwe, R J W ^a   Sonke, J J ^a   Van Herk, M B ^a   Mijnheer, B J ^a  

^a ANTONI VAN LEEUWENHOEK HOSPITAL   (Netherlands)

Author keywords

Amorphous silicon EPID; Dose response; Flat panel imagers; Portal dosimetry; Radiation dosimetry

Indexed keywords

DOSIMETRY; IMAGING TECHNIQUES; IONIZATION; IONIZATION CHAMBERS; X RAY DETECTORS;

CLINICAL CONDITIONS; DOSE RESPONSE; FLAT PANEL IMAGERS; PORTAL DOSIMETRIES; PULSE REPETITION FREQUENCIES; SIGNAL CHARACTERISTIC; SILICON ELECTRONICS; SILICON-BASED ELECTRONICS;

AMORPHOUS SILICON;

COPPER; SILICON;

ARTICLE; DEVICE; DOSIMETRY; LINEAR ACCELERATOR; PRIORITY JOURNAL; RADIATION BEAM; RADIATION DOSE; RADIATION EXPOSURE; X RAY;

EID: 1242271376     PISSN: 00942405     EISSN: None     Source Type: Journal    
DOI: 10.1118/1.1637969     Document Type: Article

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