Actinic EUVL mask blank defect inspection by EUV photoelectron microscopy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6151 II, Issue , 2006, Pages

  Kleineberg, Ulf ^a   Lin, Jingquan ^a   Neuhaeusler, Ulrich ^a   Slieh, Jawad ^a   Heinzmann, Ulrich ^a   Weber, Nils ^b   Escher, Matthias ^b   Merkel, Michael ^b   Oelsner, Andreas ^c   Valsaitsev, Dima ^c   Schoenhense, Gerd ^c  

^a BIELEFELD UNIVERSITY   (Germany)

^b Focus GMBH ^*  (Germany)

^c JOHANNES GUTENBERG UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; LIGHTING; LITHOGRAPHY; MULTILAYERS; OPTICAL RESONATORS; OPTIMIZATION; PHOTOELECTRON SPECTROSCOPY; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); INSTRUMENTAL PERFORMANCE; MASK BLANK SURFACE; PHOTOELECTRON EMISSION MICROSCOPY (PEEM);

CRYSTAL DEFECTS;

EID: 33745635018     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.659812     Document Type: Conference Paper

References (8)

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7. German patent DE 100 32 979 A1 (2002)
8. U. Neuhäusler, A. Oelsner, M. Schicketanz, J. Slieh, N. Weber, M. Brzeska, A. Wonisch, T. Westerwalbesloh, H. Brückl, M. Escher, M. Merkel, G. Schönhense, U. Kleineberg, U. Heinzmann, Applied Physics Letters (accepted 2005)