Switching in C60-fullerene based field effect transistors

Applied Physics Letters

Volumn 88, Issue 26, 2006, Pages

  Matt, G J ^a   Singh, Th B ^a   Sariciftci, N S ^a   Ramil, A Montaigne ^a   Sitter, H ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON INORGANIC COMPOUNDS; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC SPACE CHARGE; EPITAXIAL GROWTH; FULLERENES; OPTIMIZATION; SWITCHING; THIN FILMS;

C60-FULLERENE; DIVINYLTETRAMETHYLDISILOXANE; DRAIN-SOURCE CURRENT; HOT WALL EPITAXY;

FIELD EFFECT TRANSISTORS;

EID: 33745620516     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2216869     Document Type: Article

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