Sub-32nm patterning using EUVL at ASET

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6151 II, Issue , 2006, Pages

  Goo, Doohoon ^a   Tanaka, Yuusuke ^a   Kikuchi, Yukiko ^a   Oizumi, Hiroaki ^a   Nishiyama, Iwao ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

32 nm; ASET; EUV; LWR; Sensitivity curve

Indexed keywords

COST EFFECTIVENESS; DEGASSING; KRYPTON; LIGHT REFRACTION; OPTICAL RESOLVING POWER; ULTRAVIOLET RADIATION;

32 NM; ASET; EUV; LWR; SENSITIVITY CURVE;

PHOTOLITHOGRAPHY;

EID: 33745612947     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656124     Document Type: Conference Paper

References (4)

1. P. Naulleau et al., Proc. of SPIE 5751 (2005) pp. 56-63
2. H. Oizumi et al., Proc. of SPIE 5751 (2005) pp. 102-109
3. Y. Tanaka et al., Proc. of SPIE 5751 (2005) pp. 733-740
4. K. Dean et al, EUVL 2005, handout at resist workshop