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Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 839-850
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The localization of electrons in amorphous semiconductors: A twenty-first century perspective
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Author keywords
Absorption; Amorphous semiconductors; Chalcogenides; Defects; Germanium; Hydrogen in glass; Nuclear magnetic (and quadrupole) resonance; Silicon; Solar cells; Thin film transistors
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Indexed keywords
ABSORPTION;
AMORPHOUS SILICON;
CRYSTAL DEFECTS;
CRYSTAL LATTICES;
ELECTRIC EXCITATION;
ELECTRONIC STRUCTURE;
FEATURE EXTRACTION;
NUCLEAR MAGNETIC RESONANCE;
SOLAR CELLS;
THIN FILM TRANSISTORS;
AMORPHOUS SEMICONDUCTORS;
CHALCOGENIDES;
ELECTRON-LATTICE INTERACTIONS;
ENERGY STATE;
HYDROGEN IN GLASS;
METASTABLE EXCITATIONS;
SEMICONDUCTOR MATERIALS;
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EID: 33745473496
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2006.01.057 Document Type: Article |
Times cited : (14)
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References (41)
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