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Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 839-850

The localization of electrons in amorphous semiconductors: A twenty-first century perspective

Author keywords

Absorption; Amorphous semiconductors; Chalcogenides; Defects; Germanium; Hydrogen in glass; Nuclear magnetic (and quadrupole) resonance; Silicon; Solar cells; Thin film transistors

Indexed keywords

ABSORPTION; AMORPHOUS SILICON; CRYSTAL DEFECTS; CRYSTAL LATTICES; ELECTRIC EXCITATION; ELECTRONIC STRUCTURE; FEATURE EXTRACTION; NUCLEAR MAGNETIC RESONANCE; SOLAR CELLS; THIN FILM TRANSISTORS;

EID: 33745473496     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2006.01.057     Document Type: Article
Times cited : (14)

References (41)
  • 40
    • 33745462421 scopus 로고    scopus 로고
    • J.K. Olson, H. Li, T. Ju, M.C. DeLong, P.C. Taylor, J. Appl. Phys., in press.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.