Metastability of two-hydrogen complexes in silicon

Applied Physics Letters

Volumn 83, Issue 18, 2003, Pages 3710-3712

  Chadi, D J ^a  

^a NEC LABORATORIES AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMS; BINDING ENERGY; CALCULATIONS; CHEMICAL BONDS; COMPLEXATION; CRYSTALLINE MATERIALS; DEFECTS; ELECTRON ENERGY LEVELS; PARAMAGNETIC RESONANCE; SILICON; STABILITY;

CRYSTALLINE SILICON; FIRST PRINCIPLES TOTAL ENERGY CALCULATIONS; METASTABILITY; TWO HYDROGEN INTERSTITIAL COMPLEXES;

HYDROGEN;

EID: 0345359909     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1624476     Document Type: Article

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