Tritium induced defects in amorphous silicon

Materials Research Society Symposium Proceedings

Volumn 808, Issue , 2004, Pages 159-164

  Whitaker, J ^a   Viner, J ^a   Zukotynski, S ^b   Johnson, E ^b   Taylor, P C ^a   Stradins, P ^c  

^a UNIVERSITY OF UTAH   (United States)

^b UNIVERSITY OF TORONTO   (Canada)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; HYDROGEN; HYDROGENATION; LIGHT ABSORPTION; MICROWAVES; NUCLEAR POWER PLANTS; PARAMAGNETIC RESONANCE; TRITIUM;

DEFECT DENSITY; LIGHT-INDUCED DEFECTS; PHOTOTHERMAL DEFLECTION SPECTROSCOPY (PDS); TRITIUM DECAY;

AMORPHOUS SILICON;

EID: 12844267619     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-808-a2.4     Document Type: Conference Paper

References (9)

1. D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. 31, 292 (1977).
2. H. Fritzsche, Ann. Rev. Mater. Res. 31, 47 (2001).
3. S. Zukotynski, F. Gaspari, N. Kherani, T. Kosteski, K. Law, W.T. Shmayda, C.M. Tan, J. of Non-Cryst. Solids 299-302, 476 (2002).
4. T. Kosteski, N. P. Kherani, P. Stradins, F. Gaspari, W. T. Shmayda, L. Sidhu and S. Zukotynski, IEE Proc. - Circuits Devices Syst. 150, 274 (2003).
5. M. Stutzmann, W. B. Jackson, and C. C. Tsai, in Optical Effects in Amorphous Semiconductors - 1984, AIP Conf. Proc. No. 120, edited by P. C. Taylor and S. G. Bishop (AIP, New York, 1984), p. 213 H.
6. Branz, Solid State Commun. 105 (6) (1998) 387.
7. H. Branz, Phys. Rev. B 59 (1999) 5498.
8. W. B. Jackson and N. B. Amer, Phys. Rev. B. 25, 5559, (1982).
9. Yelon, Fritzsche, Branz, J. Non-Cryst. Solids, 266, 473, (2000).