Temperature dependence of the photoconductivity and the near absence of light-induced defects in a-SixGe1-x:H

Materials Research Society Symposium - Proceedings

Volumn 420, Issue , 1996, Pages 563-568

  Fritzsche, H ^a   Stradins, P ^a   Belomoin, G ^a  

^a UNIVERSITY OF CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; PHOTOCONDUCTIVITY; QUENCHING; TEMPERATURE; THERMAL EFFECTS;

LIGHT INDUCED DEFECT; TEMPERATURE DEPENDENCE;

AMORPHOUS SILICON;

EID: 0030407606     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-563     Document Type: Conference Paper

References (13)