Surface-gated quantum hall effect in an inas heterostructure

Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

  Gelfand, Ian J ^a   Amasha, S ^b   Zumbuhl D M ^b   Kastner, M A ^b   Kadow, C ^c   Gossard, A C ^c  

^a HARVARD UNIVERSITY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIDE HETEROSTRUCTURE; DEPLETION; GATE VOLTAGE; GATING;

ALUMINUM COMPOUNDS; ELECTRIC POTENTIAL; ELECTRON GAS; HETEROJUNCTIONS; INDIUM; QUANTUM THEORY;

HALL EFFECT;

EID: 33745471905     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2210289     Document Type: Article

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