Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 543-546

  Kadow, C ^a   Lin, H K ^a   Dahlstrom M ^a   Rodwell, M ^a   Gossard, A C ^a   Brar, B ^b   Sullivan, G ^b  

^a University of California   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Antimonides; B3. High electron mobility transistors

Indexed keywords

CARRIER CONCENTRATION; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

HALL MEASUREMENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037380512     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02447-8     Document Type: Conference Paper

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