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Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1045-1048

Substrate temperature dependence of microcrystalline silicon growth by PECVD technique

Author keywords

Microstructure; Silicon; Thin films

Indexed keywords

DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

EID: 33745432497     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.11.095     Document Type: Article
Times cited : (12)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.