|
Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 1045-1048
|
Substrate temperature dependence of microcrystalline silicon growth by PECVD technique
|
Author keywords
Microstructure; Silicon; Thin films
|
Indexed keywords
DOPING (ADDITIVES);
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
MICROSTRUCTURE;
NANOSTRUCTURED MATERIALS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
RAMAN SCATTERING;
SEMICONDUCTING SILICON;
SUBSTRATES;
THIN FILMS;
X RAY DIFFRACTION;
HYDROGEN EVOLUTION;
RAMAN MEASUREMENTS;
SILICON FILMS;
SUBSTRATE TEMPERATURE;
CRYSTAL GROWTH;
|
EID: 33745432497
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2005.11.095 Document Type: Article |
Times cited : (12)
|
References (11)
|