Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Saha, A R ^a,b   Dimitriu, C B ^a   Horsfall, A B ^a   Chattopadhyay, S ^a   Wright, N G ^a   O'Neill, A G ^a   Bose, C ^c   Maiti, C K ^b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

^c JADAVPUR UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; MATHEMATICAL MODELS; QUANTUM THEORY; THERMIONIC EMISSION;

BARRIER HEIGHT; IDEALITY FACTOR; QUANTUM-MECHANICAL MODELING; SCHOTTKY DIODES;

SCHOTTKY BARRIER DIODES;

EID: 33745280048     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2200450     Document Type: Article

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