Decaborane ion implantation for sub-40-nm gate-length PMOSFETs to enable formation of steep ultra-shallow junction and small threshold voltage fluctuation

Extended Abstracts of the Fifth International Workshop on Junction Technology, 2005

Volumn 2005, Issue , 2005, Pages 27-30

  Aoyama, Takayuki ^a   Fukuda, Masatoshi ^a   Nara, Yasuo ^a   Umisedo, Sei ^b   Hamamoto, Nariaki ^b   Tanjo, Masayasu ^b   Nagayama, Tsutomu ^b  

^a Nissin Ion Equipment Co Ltd ^*  (Japan)

^b NISSIN ION EQUIPMENT CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33745244906     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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