In-situ and real-time monitoring of MOCVD growth of III-nitrides by simultaneous multi-wavelength-ellipsometry and X-ray-diffraction

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1704-1707

  Simbrunner, C ^a   Schmidegg, K ^a   Bonanni, A ^a   Kharchenko, A ^b   Bethke, J ^b   Woitok, J ^b   Lischka, K ^c   Sitter, H ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b MALVERN INSTRUMENTS LTD   (United Kingdom)

^c UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; ELLIPSOMETERS; REAL TIME MONITORING;

CRYSTAL GROWTH; ELLIPSOMETRY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; X RAY DIFFRACTION;

NITRIDES;

EID: 33745035249     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565137     Document Type: Article

References (6)

1. A. Kharchenko et al., Rev. Sci. Instrum. 76, 033101 (2005).
2. A. Bonanni et al, J. Cryst. Growth 248, 211-215 (2003).
3. G. Bauer and W. Richter, Optical Characterization of Epitaxial Semiconductor Layers (Springer, Berlin, 1996).
4. H. Harima, J. Phys.: Condens. Matter 14, R967 (2002).
5. V. Kirchner et al., Appl. Phys. Lett. 77, 1434 (2000).
6. R. R. Reeber et al., J. Mater. Res. 15, 40 (2000).