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Journal De Physique. IV : JP

Volumn 132, Issue , 2006, Pages 133-136

Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface properties

(7) Pongracz A a,b Battistig, G b Toth A L b Makkai, Zs b Ducso Cs b Josepovits, K V a Barsony I b

a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS (Hungary)

b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON MONOXIDE; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); MORPHOLOGY; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

CRYSTAL PLANES; INTERFACE PROPERTIES; MILLER-INDICES;

NANOSTRUCTURED MATERIALS;

EID: 33744924200 PISSN: 11554339 EISSN: 17647177 Source Type: Conference Proceeding
DOI: 10.1051/jp4:2006132026 Document Type: Conference Paper

Times cited : (6)

References (10)

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