IV characteristics in structures prepared by tip induced oxidation

Journal De Physique. IV : JP

Volumn 132, Issue , 2006, Pages 171-175

  Cambell, V ^a   Soltys J ^a   Martaus, J ^a   Mosko M ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; ELECTRON TRANSITIONS; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS;

2D ELECTRON TRANSPORT; BARRIER WIDTH; NANOMETER-SIZED DEVICES;

ELECTRON GAS;

EID: 33744922381     PISSN: 11554339     EISSN: 17647177     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:2006132033     Document Type: Conference Paper

References (9)

1. G. D. Smit, S. Rogge, J. Caro, and T. M. Klapwijk, Phys. Rev. B69 (2004).
2. K. Nishinohara, N. Shigyo, and T. Wada, IEEE Trans. Electron Devices 39 (1992) 634.
3. N. Sano, K. Matsuzawa, M. Mukai, and N. Nakayama, Tech. Dig. Int. Electron Devices Meet. 275 (2000).
4. E. S. Snow, D. Park, and P. M. Campbell, Appl. Phys. Lett. 69 (1996) 269.
5. K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian, and J. S. Harris, Appl. Phys. Lett. 68 (1996) 34.
6. A. Fuhrer, A. Dorn, S. Lüscher, T. Heinzel, K. Ensslin, W. Wegscheider, and M. Bichler, Superlattices and Microstructures 31 (2002) 19.
7. V. Cambel, J. S̊oltýs, M. Moško, and R. Kúdela, Superlattices and Microstructures 36 (2004) 359.
8. V. Cambel and M. Moško, Semicond. Sci. Technol. 8 (1993) 364.
9. M. Moško, A. Mošková, and V. Cambel, Phys. Rev. B51 (1995) 16860.