A new analytical model for the thermal resistance of deep-trench bipolar transistors

IEEE Transactions on Electron Devices

Volumn 53, Issue 6, 2006, Pages 1379-1388

  Vanhoucke, Tony ^a   Hurkx, G A M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Bipolar transistors; Deep trench isolation (DTI); Self heating; Thermal resistance

Indexed keywords

COMPUTER SIMULATION; ESTIMATION; HEAT RESISTANCE; OPTIMIZATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

CIRCUIT SIMULATOR; DEEP-TRENCH BIPOLAR TRANSISTORS; DEEP-TRENCH ISOLATED TRANSISTORS; SELF-HEATING;

BIPOLAR TRANSISTORS;

EID: 33744818210     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.873848     Document Type: Article

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