Dependence of thermal resistance on ambient and actual temperature

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2004, Pages 96-99

  Paasschens, J C J ^a   Harmsma, S ^a   Van Der Toorn, R ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISSIPATION; HEAT RESISTANCE; LINEAR SYSTEMS; NONLINEAR SYSTEMS; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

ACTUAL TEMPERATURE; COMPACT MODEL; SELF-HEATING; THERMAL IMPEDANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 17044404293     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. Wiley, New York, 1981.
2. 300 for GaAs is closer to 40 than to the published value of 46 (Palankovski, personal communication).
3. S. P. Marsh, Trans. Elec. Dev., vol. 47, pp. 288-291, 2000.
4. J. R. Waldrop, K. C. Wang, and P. M. Asbeck, Trans. Elec. Dev., vol. 39, pp. 1248-1250, 1992.
5. W. Liu and A. Yuksel, Trans. Elec. Dev., vol. 42, pp. 358-360, 1995.
6. N. Bovolon, et al. Trans. Elec. Dev., vol. 45, pp. 1846-1848, 1998.
7. W. B. Joyce, Solid-State Elec., vol. 18, pp. 321-322, 1975.
8. K. Poulton, et al., J. Solid-State Circ., vol. 27, pp. 1379-1387, 1992.
9. N. Rinaldi, Trans. Elec. Dev., vol. 48, pp. 323-331, 2001.
10. N. Nenadović, et al., Trans. Elec. Dev., vol. 51, pp. 51-62, 2004.
11. J.-S. Rieh, et al., in Proc. Topical Meeting on Silicon Monolithic Integrated Circuits in RF systems, 2001, pp. 110-113.
12. T. Vanhoucke, H. M. J. Boots, and W. van Noort, Elec. Dev. Lett., vol. 25, pp. 150-152, 2004.
13. D. T. Zweidinger, et al., in Proc. BCTM, 1995, pp. 78-81.
14. D. J. Walkey, et al., Solid-State Elec., vol. 46, pp. 819-826, 2002.
15. B. H. Krabbenborg, Modelling and simulation of electrothermal interaction in bipolar transistors, Ph.D. dissertation. University Twente, 1994.
16. R. D. Thornton, et al., Characteristics and Limitations of Transistors. Wiley, New York, 1966.