Molecular beam epitaxy and morphological studies of homoepitaxial layers on chemical mechanical polished InSb(100) and InSb (111) B substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1634-1638

  Vangala, S R ^a   Qian, X ^a   Grzesik, M ^a   Santeufemio, C ^a   Goodhue, W D ^a   Allen, L P ^b   Dallas, G ^b   Dauplaise, H ^c   Vaccaro, K ^c   Wang, S Q ^c   Bliss, D ^c  

^a UNIVERSITY OF MASSACHUSETTS LOWELL   (United States)

^b Galaxy Compound Semiconductors Inc   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH QUALITY EPITAXIAL MATERIALS; HOMOEPITAXIAL LAYERS; MORPHOLOGICAL STUDIES; SURFACE OXIDE;

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; PRESSURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS;

EPITAXIAL GROWTH;

EID: 33744800005     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2190669     Document Type: Article

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