Growth and characterization of a high-purity ZnO nanoneedles film prepared by microwave plasma deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1318-1321

  Lin, Tien Chih ^a   Wang, Chih Yuan ^a   Chan, Lih Hsiung ^a   Hsiao, Da Qing ^a   Shih, Han C ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; HIGH RESOLUTION ELECTRON MICROSCOPY; MICROWAVES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; X RAY DIFFRACTION; ZINC OXIDE;

DEEP-LEVEL EMISSION; EXCITATION PROPERTY; NANONEEDLES; WURTZITE STRUCTURE;

THIN FILMS;

EID: 33744798765     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2194943     Document Type: Article

References (23)

1. S. Ijima, Nature (London) 354, 56 (1991).
2. W. Q. Han, S. S. Fan, Q. Q. Li, and Y. D. Hu, Science 277, 1287 (1997)
3. Y. Cui, Q. Q. Wei, H. K. Park, and C. M. Lieber, Science 293, 1289 (2001).
4. J. F. Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science 293, 1455 (2001).
5. M. He, I. Minus, P. Zhou, S. N. Mohammed, and J. B. Halpern, Appl. Phys. Lett. 77, 3731 (2000).
6. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang Michael, Science 292, 1897 (2001).
7. C. H. Liang, L. C. Chen, J. S. Hwang, K. H. Chen, Y. T. Hung, and Y. F. Chen, Appl. Phys. Lett. 81, 22 (2002)
8. R. F. Service, Science 276, 895 (1997).
9. H. M. Lin, S. J. Tzeng, P. J. Hsiau, and W. L. Tsai, Nanostruct. Mater. 10, 465 (1998).
10. S. H. Jo, J. Y. Lao, Z. F. Ren, R. A. Farrer, T. Baldacchini, and J. T. Fourkas, Appl. Phys. Lett. 83, 4821 (2003).
11. C. X. Xu, X. W. Sun, and B. J. Chen, Appl. Phys. Lett. 84, 1540 (2004).
12. X. H. Zhang, S. Y. Xie, Z. Y. Jiang, X. Zhang, Z. Q. Tian, Z. X. Xie, R. B. Huang, and L. S. Zheng, J. Phys. Chem. B 107, 10114 (2003).
13. Z. L. Wang, J. Phys.: Condens. Matter 16, R829 (2004)
14. J. B. Baxter, F. Wu, and E. S. Aydil, Appl. Phys. Lett. 83, 3797 (2003).
15. Y. Li, G. W. Meng, L. D. Zhang, and F. Phillipp, Appl. Phys. Lett. 76, 2011 (2000)
16. J. J. Wu, S. C. Liu, C. T. Wu, K. H. Chen, and L. C. Chen, Appl. Phys. Lett. 81, 1312 (2002).
17. Z. W. Pan, Z. R. Dai, and Z. L. Wang, Science 291, 1947 (2001).
18. P. X. Gao and Z. L. Wang, Appl. Phys. Lett. 84, 2883 (2004).
19. Y. C. Kong, D. P. Yu, B. Zhang, W. Fang, and S. Q. Feng, Appl. Phys. Lett. 78, 407 (2001).
20. K. Govender, D. S. Boyle, P. O. Brien, D. Binks, D. West, and D. Coleman, Adv. Mater. (Weinheim, Ger.) 14, 1221 (2002).
21. B. P. Zhang, N. T. Binh, Y. Segawa, K. Wakatsuki, and N. Usami, Appl. Phys. Lett. 83, 1635 (2003).
22. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996).
23. M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. D. Yang, Adv. Mater. (Weinheim, Ger.) 13, 113 (2001).