Experimental characterization of source-to-drain tunneling in 10nm SOI devices

Proceedings - IEEE International SOI Conference

Volumn 2005, Issue , 2005, Pages 34-35

  Lolivier, J ^a   Jehl, X ^a   Rafhay, Q ^a   Poiroux, T ^a   Vinet, M ^a   Previtali, B ^a   Sanquer, M ^a   Balestra, F ^b   Deleonibus, S ^a  

^a CEA GRENOBLE   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33744734286     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2005.1563525     Document Type: Conference Paper

References (7)

1. F. Boeuf et al, IEEE Trans. Nanotech. 3, no1, p105, 2004.
2. J. Lolivier et al, Int SOI conference, p17, 2004.
3. T. Poiroux et al, Int SOI conference, p73, 2004.
4. Silvaco user's manual, 2003.
5. M. Bescond et al, Proc. of ESSDERC, p395, 2003.
6. H. Kawaura, et al., Appl. Phys. Lett. 76, no25, p3810, 2000.
7. M. Sanquer et al, Phys.Rev.B 61, no11, p7249, 2000.