Detection and analysis of crystal defects in silicon by scanning infrared depolarization and photoluminescence heterodyne techniques

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 46-50

  Geiler, H D ^a   Karge, H ^a   Wagner, M ^a   Ehlert, A ^b   Daub, E ^b   Messmann, K ^b  

^a JenaWave Engineering and Consulting   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

Photoelasticity; Photoluminescence; Scanning infrared depolarization; Silicon; Sliplines; Stress

Indexed keywords

CRYSTAL DEFECTS; NONDESTRUCTIVE EXAMINATION; PHOTODEGRADATION; PHOTOELASTICITY; PHOTOLUMINESCENCE; THERMAL EFFECTS;

PHOTOLUMINESCENCE HETERODYNE TECHNIQUES; SCANNING INFRARED DEPOLARIZATION;

SILICON WAFERS;

EID: 0037197485     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00965-5     Document Type: Conference Paper

References (11)