Formation of large SiC nanocrystals on Si(1 0 0) by 12C implantation and electron beam annealing

Current Applied Physics

Volumn 6, Issue 3, 2006, Pages 507-510

  Markwitz, A ^a   Johnson, S ^a   Kennedy, J ^a   Rudolphi, M ^b   Baumann, H ^b  

^a GNS SCIENCE   (New Zealand)

^b GOETHE UNIVERSITY   (Germany)

Author keywords

12C implantation; Electron beam annealing; Nanoboulder; Nanocrystal; Nuclear reaction analysis; SiC

Indexed keywords

ANNEALING; CARBON; ELECTRON ABSORPTION; ION IMPLANTATION; SILICON CARBIDE; SILICON WAFERS;

12C IMPLANTATION; ELECTRON BEAM ANNEALING; NANOBOULDER; NANOCRYSTAL;

NANOSTRUCTURED MATERIALS;

EID: 33744541043     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2005.11.050     Document Type: Article

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