Study of a-SiGe:H films and n-i-p devices used in high efficiency triple junction solar cells

Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 2, 2002, Pages 1213-1218

  Agarwal, Pratima ^a,b   Povolny, H ^a   Han, S ^a   Deng, X ^a  

^a UNIVERSITY OF TOLEDO   (United States)

^b INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; QUANTUM EFFICIENCY; SILICON SOLAR CELLS; VOLTAGE MEASUREMENT;

BAND GAP; OPEN CIRCUIT VOLTAGE;

THIN FILMS;

EID: 0036531714     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01141-3     Document Type: Article

References (8)