Computer-aided band gap engineering and experimental verification of amorphous silicon-germanium solar cells

Solar Energy Materials and Solar Cells

Volumn 81, Issue 1, 2004, Pages 73-86

  Zambrano, Raul Jimenez ^a   Rubinelli, Francisco A ^b   Arnoldbik, Wim M ^a   Rath, Jatindra K ^a   Schropp, Ruud E I ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

^b UNIVERSIDAD NACIONAL DEL LITORAL   (Argentina)

Author keywords

a SiGe:H; Band gap design; Ge diffusion; Solar cells

Indexed keywords

ABSORPTION; AMORPHOUS SILICON; COMPUTER AIDED ENGINEERING; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; GERMANIUM ALLOYS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ABSORPTION COEFFICIENTS; BAND GAP DESIGN;

SOLAR CELLS;

EID: 0346846386     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2003.08.017     Document Type: Article

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