Properties of indium tin oxide (ITO) films prepared by r.f. reactive magnetron sputtering at different pressures

Thin Solid Films

Volumn 303, Issue 1-2, 1997, Pages 151-155

  Meng, Li Jian ^a,c   Dos Santos, M P ^b  

^a INSTITUTO SUPERIOR DE ENGENHARIA DO PORTO   (Portugal)

^b UNIVERSITY OF MINHO   (Portugal)

^c CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Electrical properties and measurements; Indium oxide; Sputtering; Structural properties

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC VARIABLES MEASUREMENT; FILM PREPARATION; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; PRESSURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SPUTTER DEPOSITION; STRESSES; SURFACE ROUGHNESS;

COMPRESSIVE STRESSES; INDIUM TIN OXIDE;

SEMICONDUCTING FILMS;

EID: 0031191845     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00050-3     Document Type: Article

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