Effects of conduction type on field-electron emission from single Si emitter tips with extraction gate

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 2, 2000, Pages 1111-1114

  Matsukawa, T ^a   Kanemaru, S ^a   Tokunaga, K ^a   Itoh, J ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; COMPUTER SOFTWARE; ELECTRON EMISSION; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; VACUUM APPLICATIONS;

FIELD EMITTER ARRAYS (FEA); SOFTWARE PACKAGE MEDICI;

FIELD EMISSION CATHODES;

EID: 0034156345     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591340     Document Type: Article

References (5)

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2. D. K. Schroder, R. N. Thomas, J. Vine, and H. C. Nathanson, IEEE Trans. Electron Devices ED-21, 785 (1974).
3. K. Sawada, K. Ji, and T. Ando, Jpn. J. Appl. Phys., Part 2 33, L1345 (1994).
4. T. Hirano, S. Kanemaru, and J. Itoh, J. Vac. Sci. Technol. B 14, 3357 (1996).
5. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), pp. 271-275.