Analysis of transient temperature profile during thermal plasma jet annealing of Si films on quartz substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 B, 2006, Pages 4355-4357

  Okada, Tatsuya ^a   Higashi, Seiichiro ^a   Kaku, Hirotaka ^a   Koba, Naohiro ^a   Murakami, Hideki ^a   Miyazaki, Seiichi ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Rapid thermal annealing; Temperature measurement; Thermal plasma jet

Indexed keywords

PLASMA JETS; QUARTZ; RAPID THERMAL ANNEALING; REFRACTIVE INDEX; SILICON; SUBSTRATES; TEMPERATURE MEASUREMENT;

MILLISECONDS; THERMAL PLASMA JET; TRANSIENT TEMPERATURE;

THIN FILMS;

EID: 33744492619     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4355     Document Type: Article

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