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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3680-3685

Novel method of converting metallic-type carbon nanotubes to semiconducting-type carbon nanotube field-effect transistors

(7) Chen, Bae Horng a,b Wet, Jeng Hua c Lo, Po Yuan a Pei, Zing Way a Chao, Tien Sheng b Lin, Horng Chih b Huang, Tiao Yuan b

a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c CHING YUN UNIVERSITY (Taiwan)

Author keywords

Chirality; Ion bombardment; Metallic type; Semiconducting type; Single walled carbon nanotubes (SWNTs)

Indexed keywords

FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); ION BOMBARDMENT; METALLIC FILMS; SEMICONDUCTOR MATERIALS; SENSORS;

CHIRALITY; METALLIC TYPES; SEMICONDUCTING TYPES; SINGLE-WALLED CARBON NANOTUBES (SWNTS);

CARBON NANOTUBES;

EID: 33646911911 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.3680 Document Type: Article

Times cited : (14)

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