Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 33, Issue 1, 2006, Pages 280-283

  Jung, S I ^a   Yeo, H Y ^a   Yun, I ^a   Leem, J Y ^b   Han, I K ^c   Kim, J S ^d   Lee, J I ^e  

^a Yonsei University   (South Korea)

^b Inje University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^e Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Bimodal size distribution; InAs; Photoluminescence; Quantum dots

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; TEMPERATURE;

BIMODAL SIZE DISTRIBUTION; DISTINCTIVE DOUBLE PEAK FEATURE; INAS; SUBSTRATE TEMPERATURE;

SEMICONDUCTING INDIUM;

EID: 33646909670     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2006.03.150     Document Type: Article

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