The characterization of stacked α-Si/SiGe/α-Si sensing membrane

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 46-49

  Yang, Chia Ming ^a   Lai, Chao Sung ^a   Wang, Chih Yao ^a   Lue, Cheng En ^a   Chou, Jung Chung ^b   Chung, Wen Yaw ^c   Pijanowska, Dorota G ^d  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^d INSTITUTE OF BIOCYBERNETICS AND BIOMEDICAL ENGINEERING   (Poland)

Author keywords

Electrolyte Insulator Semiconductor; Sensitivity; Silicon Germanium

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HYDRATION; ION SENSITIVE FIELD EFFECT TRANSISTORS; OXIDATION; PH EFFECTS; PRINTED CIRCUIT BOARDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON COMPOUNDS;

ELECTROLYTE-INSULATOR-SEMICONDUCTOR; ION SENSING MEMBRANES; PH SENSITIVITY; SILICON GERMANIUM;

THIN FILMS;

EID: 19944396502     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.041     Document Type: Conference Paper

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