Lifetime study of N impurity states in Ga As1-x Nx (x=0.1%) under hydrostatic pressure

Applied Physics Letters

Volumn 88, Issue 20, 2006, Pages

  Wang, W J ^a   Yang, X D ^a   Ma, B S ^a   Sun, Z ^a   Su, F H ^a   Ding, K ^a   Xu, Z Y ^a   Li, G H ^a   Zhang, Y ^b   Mascarenhas, A ^b   Xin, H P ^c   Tu, C W ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITY STATES;

BINDING ENERGY; ELECTRON EMISSION; HYDROSTATIC PRESSURE; IMPURITIES; PHOTOLUMINESCENCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33646868231     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2205729     Document Type: Article

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