Electronic structure of the UD3 defect in 4H- And 6H-SiC

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 509-512

  Wagner, Mt ^a   Magnusson, B ^a,b   Chen, W M ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic AB   (Sweden)

Author keywords

Deep level defects; Magneto optics; Semi insulating

Indexed keywords

ELECTRONIC STRUCTURE; EXCITED STATES; GROUND STATE; PHOTOLUMINESCENCE; SILICON CARBIDE; SPIN POLARIZATION; DEFECTS; MAGNETOOPTICAL EFFECTS; TEMPERATURE;

DEEP LEVEL DEFECTS; DOUBLET EXCITED STATE; SINGLET GROUND STATE; ZEEMAN EXPERIMENTS; DEEP-LEVEL DEFECTS; LOW TEMPERATURES; PL EXCITATIONS; SEMI-INSULATING;

CRYSTAL DEFECTS; SILICON CARBIDE;

EID: 33646793906     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.509     Document Type: Article

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