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Volumn 99, Issue 8, 2006, Pages

Inelastic tunneling spectroscopy of magnetic tunnel junctions based on CoFeB/MgO/CoFeB with Mg insertion layer

(7) Miao, Guo Xing a,b Chetry, Krishna B a Gupta, Arunava a Butler, William H a Tsunekawa, Koji c Djayaprawira, David c Xiao, Gang b

a UNIVERSITY OF ALABAMA (United States)

b BROWN UNIVERSITY (United States)

c Canon ANELVA Technix Corporation (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARTIFICIAL ASYMMETRIC BARRIERS; INELASTIC TUNNELING SPECTROSCOPY; MAGNETIC TUNNEL JUNCTIONS (MTJ); TUNNELING MAGNETORESISTANCE (TMR);

COBALT COMPOUNDS; ELECTRIC EXCITATION; ELECTRODES; FERROMAGNETIC MATERIALS; MAGNESIUM COMPOUNDS; MAGNETIZATION; MAGNETORESISTANCE; PHONONS; SPECTROSCOPIC ANALYSIS; THIN FILMS;

TUNNEL JUNCTIONS;

EID: 33646735648 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2162047 Document Type: Article

Times cited : (79)

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