Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 520-524

  Alivov, Y I ^a   Bo, X ^a   Akarca Biyikli, S ^a   Fan, Q ^a   Xie, J ^a   Biyikli, N ^a   Zhu, K ^a   Johnstone, D ^a   Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

Heterojunction; Radio frequency (RF) sputtering; Schottky diode; ZnO

Indexed keywords

ELECTRON CONCENTRATION; IDEALITY FACTORS; RADIO-FREQUENCY (RF) SPUTTERING; ZNO;

ELECTRIC PROPERTIES; HETEROJUNCTION BIPOLAR TRANSISTORS; MAGNETRON SPUTTERING; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS; ZINC OXIDE;

METALLIC FILMS;

EID: 33646723905     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0093-1     Document Type: Conference Paper

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