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Volumn 42, Issue 10, 2006, Pages 578-580

Three-terminal-controlled resistor-type hydrogen sensor

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON MOBILITY; HYDROGEN; RESISTORS; TRANSISTORS;

EID: 33646685951     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20060529     Document Type: Article
Times cited : (2)

References (9)
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    • 0.85As pseudomorphic transistors ', Appl. Phys. Lett., 1999, 74, p. 2155-2157
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    • 0.76As high-electron-mobility transistor ', Appl. Phys. Lett., 2005, 86, p. 112103
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    • Cheng, C.C.1
  • 6
    • 32244444701 scopus 로고    scopus 로고
    • AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition
    • Hung, C.W.: et al. ' AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition ', Jpn. J. Appl. Phys., 2006, 45, p. 680-684
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    • Hung, C.W.1
  • 7
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    • Wide-range (0.33%-100%) 3C-SiC resistive hydrogen gas sensor development
    • Fawcett, T.J.: et al. ' Wide-range (0.33%-100%) 3C-SiC resistive hydrogen gas sensor development ', Appl. Phys. Lett., 2004, 85, p. 416-418
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 416-418
    • Fawcett, T.J.1
  • 8
    • 24144443485 scopus 로고    scopus 로고
    • GaN resistive hydrogen gas sensors
    • Yun, F.: et al. ' GaN resistive hydrogen gas sensors ', Appl. Phys. Lett., 2005, 87, p. 073507
    • (2005) Appl. Phys. Lett. , vol.87 , pp. 073507
    • Yun, F.1
  • 9
    • 31944450277 scopus 로고    scopus 로고
    • Pt/GaN Schottky diodes for hydrogen gas sensors
    • Ali, M.: et al. ' Pt/GaN Schottky diodes for hydrogen gas sensors ', Sens. Actuators B, 2006, 113, p. 797-804
    • (2006) Sens. Actuators B , vol.113 , pp. 797-804
    • Ali, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.