Effects of substrate temperature on tin-doped indium oxide films deposited by dc arc discharge ion plating

Vacuum

Volumn 80, Issue 7 SPEC. ISS., 2006, Pages 783-787

  Omoto, Hideo ^a   Takamatsu, Atsushi ^a   Kobayashi, Takashi ^a  

^a CENTRAL GLASS CO LTD   (Japan)

Author keywords

dc arc discharge ion plating; Ito; Low resistivity; Low temperature process; Tin doped indium oxide

Indexed keywords

CARRIER MOBILITY; CRYSTALLIZATION; ELECTRIC DISCHARGE MACHINING; GRAIN SIZE AND SHAPE; ION IMPLANTATION; PLATING; TIN COMPOUNDS;

DC ARC DISCHARGE ION PLATING; LOW RESISTIVITY; LOW-TEMPERATURE PROCESS; SUBSTRATE TEMPERATURE; TIN-DOPED INDIUM OXIDE;

THIN FILMS;

EID: 33646587720     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.11.031     Document Type: Article

References (10)

1. Takimoto Y, Mitsui A, Masumo K. In: Proceedings of the seventh international symposium on sputtering & plasma process, Kanazawa, 2003. p. 51.
2. Tak Y.H., Kim K.B., Park H.G., Lee K.H., and Lee J.R. Thin Solid Films 411 (2002) 12
3. Oyama T., Hashimoto N., Shimizu J., Akao Y., Kojima H., Aikawa K., et al. J Vac Sci Technol A 10 4 (1992) 1682
4. Jung Y.S., Lee D.W., and Jeon D.Y. Appl Surf Sci 221 (2004) 136
5. Shigesato Y., Takaki S., and Haranoh T. Appl Surf Sci 48/49 (1991) 269
6. Goorsky M.S., and Tanner B.K. Crys Res Technol 37 (2002) 645
7. Hamberg I., and Granqvist C. J Appl Phys 60 (1986) R123
8. Shigesato Y., Takaki S., and Haranoh T. J Appl Phys 71 (1992) 3356
9. Shigesato Y., and Paine D.C. Thin Solid Films 238 (1994) 44
10. Higuchi M., Uekasa S., Nakano R., and Yokogawa K. J Appl Phys 74 (1993) 6710