FTIR-based non-destructive method for metrology of depths in poly silicon filled trenches

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5038 I, Issue , 2003, Pages 185-190

  Zaidi, Shoaib ^a   Stojakovic, George ^a   Gutmann, Alois ^a   Bozdog, Cornel ^b   Mantz, Ulrich ^c   Charpenay, Sylvie Bosch ^b   Rosenthal, Peter ^b  

^a INFINEON TECHNOLOGIES   (United States)

^b On Line Products   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

110 nm; 50 nm; 90 nm; DRAM; FTIR; Metrology; Poly recess depth; Scatterometry; SEM; Trench; Vertical transistor

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NONDESTRUCTIVE EXAMINATION; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; TRANSISTORS;

ETCH UNIFORMITY; POLYSILICON FILLED TRENCHES; SCATTEROMETRY; VERTICAL TRANSISTOR;

OPTICAL VARIABLES MEASUREMENT;

EID: 0141723688     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.484998     Document Type: Conference Paper

References (4)

1. IBM/Infineon announcement, www.siliconstrategies.com/semibiznews/OEG20001214S0008
2. FilmExpert™ Thin Film Analyzer from MKS Instruments, On-Line Products, www.mksinst.com/cgi-bin/product.exe?pid=onlineFILMEXPERT
3. Hecht, "Optics", Addison Wesley, 4th edition, (2002).
4. Craig F. Bohren, Donald R. Huffman, "Absorption and Scattering of Light by Small Particles", Wiley (1998).