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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 12-16, 2006, Pages

Electron-beam domain writing in stoichiometric LiTaO3 single crystal by utilizing resist layer

(4) Li, Xijun a Terabe, Kazuya a Hatano, Hideki a,b Kitamura, Kenji a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b Corporate Research and Development Laboratories Pioneer ^* (Japan)

Author keywords

Domain switching; E beam; Resist

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; FERROELECTRIC MATERIALS; OPTICAL PROPERTIES; SINGLE CRYSTALS; STOICHIOMETRY;

BEAM ELECTRONS; DOMAIN SWITCHING; E-BEAM; ELECTRON-BEAM DIRECT WRITING; PHOTONIC DEVICES; RESIST;

LITHIUM COMPOUNDS;

EID: 33646472315 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.L399 Document Type: Article

Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.