Development of heavy negative-ion sources and their application to ion implantation and ion beam deposition

Journal of the Korean Physical Society

Volumn 48, Issue 4 I, 2006, Pages 703-710

  Ishikawa, Junzo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Deposition; Implantation; Negative ion

Indexed keywords

EID: 33646426157     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (27)

1. J. Ishikawa, H. Tsuji, Y. Gotoh and Azegami, Proc. 6th Int. Symp. on Production & Neutralization of Negative Ions & Beams, AIP Conf. Proc. No. 287 (AIP, Brookhaven, 1992), p. 66.
2. J. Ishikawa, Y. Takeiri, H. Tsuji, T. Taya and T. Takagi, Nucl. Instrum. Meth. 232, 186 (1984).
3. G. D. Alton, Y. Mori, A. Takagi, A. Ueno and S. Fukumoto, Rev. Sci. Instrum. 61, 372 (1990).
4. Y. Mori, Rev. Sci. Instrum. 63, 2357 (1992).
5. J. Ishikawa, H. Tsuji, Y. Okada, M. Shinoda and Y. Gotoh, Vacuum 44, 203 (1993).
6. H. Tsuji, J. Ishikawa, Y. Okayama, Y. Toyota and Y. Gotoh, Proc. Ion Implantation Technology-94 (Elsevier, Amsterdam, 1995), p. 495.
7. J. Ishikawa, H. Tsuji, Y. Toyota, Y. Gotoh, K. Matsuda, M. Tanjo and S. Sakai, Nucl. Instrum. Meth. B 96, 7 (1995).
8. J. Ishikawa, Surface and Coatings Technology, 65, 64 (1994).
9. J. Ishikawa, Mat. Res. Soc. Symp. Proc., Vol. 354 (Material Research Society, Pittsburgh, 1995), p. 99.
10. J. Ishikawa, Rev. Sci. Instrum. 65, 1290 (1994).
11. J. Ishikawa, Application of Accelerators in Research and Industry (AIP Press, New York, 1997), p. 915.
12. J. Ishikawa, H. Tsuji, M. Mimura, S. Ikemura and Y. Gotoh, Surface and Coatings Technology 103-104, 173 (1998).
13. J. Ishikawa, H. Tsuji, N. Arai, T. Matsumoto, K. Ueno, K. Adachi, H. Kotaki and Y. Gotoh, Nucl. Instrum. Meth. B 237, 422 (2005).
14. H. Tsuji, M. Izukawa, R. Ikeguchi, R. Kakinoki, H. Sato, Y. Gotoh and J. Ishikawa, Nucl. Instrum. Meth. B 206, 507 (2003).
15. H. Tsuji, M. Izukawa, Y. Utagawa, R. Ikeguchi, R. Kakinoki, H. Sato, Y. Gotoh and J. Ishikawa, Trans. Mat. Res. Soc. Japan 29, 575 (2004).
16. J. Ishikawa, New Horizons for Materials (Techna, Faenza, 1995), p. 399.
17. J. Ishikawa, Y. Takeiri and T. Takagi, Rev. Sci. Instrum. 57, 1512 (1993).
18. H. Tsuji, J. Ishikawa, T. Tomita, T. Yoshihara and T. Gotoh, Rev. Sci. Instrum. 69, 884 (1998).
19. J. Ishikawa, H. Tsuji and T. Maekawa, Vacuum 39, 1129 (1989).
20. J. Ishikawa, Y. Takeiri and T. Takagi, Rev. Sci. Instrum. 57, 1512 (1986).
21. H. Tsuji, J. Ishikawa, T. Tomita and Y. Gotoh, Rev. Sci. Instrum. 67, 1012 (1996).
22. H. Tsuji, J. Ishikawa, T. Tomita and Y. Gotoh, Proc. Ion Implantation Technology-96, IEEE 96TH8182 (1997), p. 334.
23. J. Ishikawa, Rev. Sci. Instrum. 67, 1410 (1996).
24. H. Tsuji, J. Ishikawa, S. Ikeda and Y. Gotoh, Nucl. Instrum. Meth. B 127-128, 278 (1997).
25. H. Tsuji, Y. Gotoh and J. Ishikawa, Nucl. Instrum. Meth. B 141, 645 (1998).
26. J. Ishikawa, H. Tsuji and Y. Gotoh, Proc. Ion Implantation Technology-96, IEEE 96TH8182 (1997), p. 249.
27. J. Ishikawa, Proc. 7th Int. Symp. on Advanced Nuclear Energy Research, Takasaki, JAERI-Conf. 97-003 (1997), p. 149.