Mechanism for increasing dopant incorporation in semiconductors via doped nanostructures

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 19, 2006, Pages

  Kuskovsky, Igor L ^a,b   Gu, Y ^b,f   Gong, Y ^b   Yan, H F ^b   Lau, J ^b,d   Noyan, I C ^b   Neumark, G F ^b   Maksimov, O ^c   Zhou, X ^c   Tamargo, M C ^c   Volkov, V ^d   Zhu, Y ^d   Wang, L ^e  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b Columbia University ^*  (United States)

^c CITY COLLEGE OF NEW YORK   (United States)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

^e CHARLES EVANS AND ASSOCIATES   (United States)

^f NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646408769     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.195306     Document Type: Article

References (31)

1. G. F. Neumark, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.62. 1800 62, 1800 (1989).
2. G. F. Neumark, R. M. Park, and J. M. DePuydt, Phys. Today PHTOAD 0031-9228 47 (6), 26 (1994).
3. G. F. Neumark, Mater. Lett. MLETDJ 0167-577X 10.1016/S0167-577X(96)00194- 2 30, 131 (1997).
4. G. F. Neumark, Mater. Sci. Eng., R. MIGIEA 0927-796X 10.1016/S0927- 796X(97)00008-9 21, 1 (1997).
5. C. G. Van de Walle, D. B. Laks, G. F. Neumark, and S. T. Pantelides, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.47.9425 47, 9425 (1993).
6. D. B. Laks, C. G. Van de Walle, G. F. Neumark, and S. T. Pantelides, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.109681 63, 1375 (1993).
7. S. B. Zhang, S. H. Wei, and A. Zunger, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.84.1232 84, 1232 (1999).
8. D. J. Chadi, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.15181 59, 15181 (1999).
9. W.-C. Lin, M. C. Tamargo, I. Kuskovsky, C. Tian, and G. F. Neumark, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126297 76, 2205 (2000).
10. S. P. Guo, W.-C. Lin, X. Zhou, M. C. Tamargo, C. Tian, I. Kuskovsky, and G. F. Neumark, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1384863 90, 1725 (2001).
11. W. Lin, B. X. Yang, S. P. Guo, A. Elmouni, F. Fernandez, and M. C. Tamargo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125093 75, 2608 (1999).
12. V. N. Jmerik, S. V. Sorokin, T. V. Shubina, N. M. Shmidt, I. V. Sedova, D. L. Fedorov, S. V. Ivanov, and P. S. Kop'ev, J. Cryst. Growth JCRGAE 0022-0248 10.1016/S0022-0248(00)00139-1 214/215, 502 (2000).
13. Igor L. Kuskovsky, G. F. Neumark, J. G. Tischler, and B. A. Weinstein, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.63.161201 63, 161201 (R) (2001).
14. N. Yu. Gordeev, S. V. Ivanov, I. I. Novikov, T. V. Shubina, N. D. Ilinskaya, S. P. Kopev, G. Reuscher, A. Waag, and G. Landehr, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/1521-3951(200201)229:2<1019::AID- PSSB1019>3.0.CO;2-G 229, 1019 (2002).
15. S. Gundel and W. Faschinger, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.035208 65, 035208 (2002).
16. Y. Gu, Igor L. Kuskovsky, M. van der Voort, G. F. Neumark, X. Zhou, M. Muñoz, and M. C. Tamargo, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/pssb.200304224 241, 515 (2004).
17. H. F. Yan, Ph.D. dissertation, Columbia University, 2005.
18. D. Keith Bowen and Brian K. Tanner, High Resolution X-ray Diffractometry and Topography (Taylor & Francis, London, 1998), Chap..
19. Y. Gu, Igor L. Kuskovsky, M. van der Voort, G. F. Neumark, X. Zhou, and M. C. Tamargo, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.045340 71, 045340 (2005).
20. We note that the knowledge of hole concentration is essential for confirming the improved p -type doping. However, in practice, the Hall effect is difficult to measure, even in Van der Pauw geometry, in the absence of reliable Ohmic contacts [see e.g., P. M. Mensz, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.110339 63, 2800 (1993);
21. NIST, http://www.eeel.nist.gov/812/effe.htm#evol;
22. David C. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989), Chap.]
23. which are hard to fabricate in p -type ZnSe because of the surface Fermi level pinning [e.g., Y. Koide, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.366049 82, 2393 (1997)].
24. Moreover, it is even less accurate for materials with low free-carrier mobility [D. Marioli and V. Varoli, J. Phys. E JPSIAE 0022-3735 10.1088/0022-3735/16/9/017 16, 892 (1983)], which is the case of p -type ZnSe.
25. C. G. Van de Walle, D. B. Laks, G. F. Neumark, and S. T. Pantelides, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.47.9425 47, 9425 (1993).
26. Igor L. Kuskovsky, C. Tian, C. Sudbrack, G. F. Neumark, W.-C. Lin, S. P. Guo, and M. C. Tamargo, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1389483 90, 2269 (2001).
27. P. J. Dean, W. Stutius, G. F. Neumark, B. J. Fitzpatrick, and R. N. Bhargava, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.27.2419 27, 2419 (1983).
28. N. J. Duddles, K. A. Dhese, P. Devine, D. E. Ashenford, C. G. Scott, J. E. Nicholls, and J. E. Lunn, J. Appl. Phys. JAPIAU 0021-8979 76, 5214 (1994).
29. Y. Fan, J. Han, L. He, J. Saraie, R. L. Gunshor, M. Hagerott, and A. V. Nurmikko, J. Electron. Mater. JECMA5 0361-5235 23, 245 (1994).
30. H. D. Jung, C. D. Song, S. Q. Wang, K. Arai, Y. H. Wu, Z. Zhu, T. Yao, and H. Katayama-Yoshida, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118481 70, 1143 (1997).
31. See, e.g., http://www.darpa.mil/mto/suvos/index.html