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The samples are grown on a thick (400 nm) ZnSe layer (buffer region) and GaAs substrate, and the δ-doped regions are separated from each other by ZnSe spacer regions (∼20 MLs). This peak is absent in PLE since for FXs to participate in the excitation process they have to diffuse into the delta layers, which is unlikely, especially since the concentration of FXs is small due to the weak intensity of the excitation source used for PLE (xenon lamp).
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